SiOx – Amorphous Silicon Oxide (SiOx)

The deposition process occurs in a vacuum chamber under controlled atmospheric conditions, where reactive gases are ionized (plasma state) via an electromagnetic field.

Using medium- or high-frequency generators, the plasma energy ionizes the gases, leading to the formation of the SiOx film.

• Conductive materials (e.g., metals) can be connected to power source.
• Non-conductive materials (e.g., polymers) can be simply exposed to plasma generated by dedicated antennas.

The current passing between anode and cathode ionizes the gases, creating a reactive plasma.
The ions and radicals in the plasma then bombard the surface, forming the desired film.

The shape and geometry of the plasma source antennas allow for precise, uniform deposition, even on complex geometries.
By adjusting the geometry of the antennas, it is possible to concentrate the coating in specific areas or exclude others, allowing customized film distribution.

In most cases, silyl ethers are used to deliver silica into the chamber, which is then oxidized to form the SiOx film. However, monomers or solid targets can also be used via sputtering, although the first method is more efficient and cost-effective, making it the preferred industrial solution.